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Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK


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Product information

Item number:
     4MD6L-TK6Q60W
Manufacturer:
     Toshiba
Manufacturer no.:
     TK6Q60W,S1VQ(S
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: TOSHIBA
Mounting: THT
Case: IPAK
Drain-source voltage: 600V
Drain current: 6.2A
On-state resistance: 0.68Ω
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24.8A
Other search terms: Transistors, power transistor
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