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Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB


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Product information

Item number:
     4MD6L-SIHP12N60E-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHP12N60E-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: THT
Case: TO220AB
Drain-source voltage: 600V
Drain current: 7.8A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 147W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Other search terms: Transistor, Transistors, power mosfet
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