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Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA


Quantity:  piece  
Product information

Item number:
     4MD6L-PJMD900N60EC-L2
Manufacturer:
     PanJit Semiconductor
Manufacturer no.:
     PJMD900N60EC_L2_00001
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: PanJit Semiconductor
Mounting: SMD
Case: TO252AA
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 8.8nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.7A
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