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Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A


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Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Item number:
     4MD6L-YJS12N10A-YAN
Manufacturer:
     YANGJIE TECHNOLOGY
Manufacturer no.:
     YJS12N10A
EAN/GTIN:
     n/a
Search terms:
Power transistor
SMD transistor
SMD transistors
smd transistor
Manufacturer: YANGJIE TECHNOLOGY
Mounting: SMD
Case: SOP8
Drain-source voltage: 100V
Drain current: 7.6A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 80nC
Technology: SPLIT GATE TRENCH
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
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