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Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A


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Product information

Item number:
     4MD6L-YJQ15GP10A-YAN
Manufacturer:
     YANGJIE TECHNOLOGY
Manufacturer no.:
     YJQ15GP10A
EAN/GTIN:
     n/a
Manufacturer: YANGJIE TECHNOLOGY
Mounting: SMD
Case: DFN3.3x3.3 EP
Drain-source voltage: -100V
Drain current: -9.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 17.2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 3.98nC
Technology: SPLIT GATE TRENCH
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
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from € 0.16*
  
Price is valid from 7,500,000 pieces
Minimum order quantity: 3 pieces
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from 3 pieces
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€ 0.46
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from 25 pieces
€ 0.28*
€ 0.34
per piece
from 100 pieces
€ 0.25*
€ 0.31
per piece
from 150 pieces
€ 0.23*
€ 0.28
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from 300 pieces
€ 0.22*
€ 0.27
per piece
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€ 0.19*
€ 0.23
per piece
from 1500 pieces
€ 0.18*
€ 0.22
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from 7500000 pieces
€ 0.16*
€ 0.20
per piece
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