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Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W


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Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
Item number:
     4MD6L-YJG80G06A-YAN
Manufacturer:
     YANGJIE TECHNOLOGY
Manufacturer no.:
     YJG80G06A
EAN/GTIN:
     n/a
Search terms:
Power transistor
SMD transistor
SMD transistors
smd transistor
Manufacturer: YANGJIE TECHNOLOGY
Mounting: SMD
Case: DFN5060-8
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 67nC
Technology: SPLIT GATE TRENCH
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
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