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Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W


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Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W
Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W
Item number:
     4MD6L-YJD80G06A-YAN
Manufacturer:
     YANGJIE TECHNOLOGY
Manufacturer no.:
     YJD80G06A
EAN/GTIN:
     n/a
Search terms:
Power transistor
SMD transistor
SMD transistors
smd transistor
Manufacturer: YANGJIE TECHNOLOGY
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 56A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 42.5W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 31nC
Technology: SPLIT GATE TRENCH
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
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from € 0.171*
  
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Minimum order quantity: 3 pieces
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€ 0.31734
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€ 0.28044
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€ 0.23493
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€ 0.171*
€ 0.21033
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