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Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4A; 1.6W; SOT89-3


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Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4A; 1.6W; SOT89-3
Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4A; 1.6W; SOT89-3
Item number:
     4MD6L-VP3203N8-G
Manufacturer:
     Microchip Technology
Manufacturer no.:
     VP3203N8-G
EAN/GTIN:
     n/a
Search terms:
Power transistor
power transistor
Manufacturer: MICROCHIP TECHNOLOGY
Mounting: SMD
Case: SOT89-3
Drain-source voltage: -30V
Drain current: -1.1A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: tape;reel
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -4A
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