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Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW


Quantity:  piece  
Product information

Item number:
     4MD6L-VMO550-01F
Manufacturer:
     IXYS
Manufacturer no.:
     VMO550-01F
EAN/GTIN:
     n/a
Search terms:
Power transistor
power transistor
Manufacturer: IXYS
Case: Y3-DCB
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 100V
Drain current: 590A
On-state resistance: 2.1mΩ
Power dissipation: 2.2kW
Polarisation: unipolar
Electrical mounting: screw;FASTON connectors
Mechanical mounting: screw
Type of module: MOSFET transistor
Features of semiconductor devices: Kelvin terminal
Gate charge: 2µC
Technology: HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 2.36kA
An overview of the conditions1
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from € 343.53*
  
Price is valid from 500 pieces
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Unit
1 piece
€ 483.03*
€ 594.13
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€ 419.22*
€ 515.64
per piece
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€ 376.91*
€ 463.60
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€ 368.19*
€ 452.87
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€ 441.00
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€ 343.53*
€ 422.54
per piece
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