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Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A


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Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Item number:
     4MD6L-UJ3C065080B3
Manufacturer:
     Qorvo (UnitedSiC)
Manufacturer no.:
     UJ3C065080B3
EAN/GTIN:
     n/a
Search terms:
Junction FET transistor
Power transistor
SMD transistor
SMD transistors
Manufacturer: Qorvo (UnitedSiC)
Mounting: SMD
Case: D2PAK
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Other search terms: Transistor, Transistors, smd transistor
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