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Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A


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Product information

Item number:
     4MD6L-UJ3C065030K3S
Manufacturer:
     Qorvo (UnitedSiC)
Manufacturer no.:
     UJ3C065030K3S
EAN/GTIN:
     n/a
Search terms:
Diodes
Junction FET transistor
Power transistor
MOSFET
Manufacturer: Qorvo (UnitedSiC)
Mounting: THT
Case: TO247-3
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 30mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Version: ESD
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
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€ 36.29*
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