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Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A


Quantity:  piece  
Product information

Item number:
     4MD6L-UJ3C065030B3
Manufacturer:
     Qorvo (UnitedSiC)
Manufacturer no.:
     UJ3C065030B3
EAN/GTIN:
     n/a
Search terms:
Diodes
Junction FET transistor
Power transistor
MOSFET
Attention!
This product is sold up to the quantity available in stock. In case of larger orders, the amount will be replaced by the available quantity.

Manufacturer: Qorvo (UnitedSiC)
Mounting: SMD
Case: D2PAK
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Version: ESD
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
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In stock In stock
€ 31.93*
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€ 33.83
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€ 32.77
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€ 30.22
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