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Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A


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Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Item number:
     4MD6L-UF3C065080K4S
Manufacturer:
     Qorvo (UnitedSiC)
Manufacturer no.:
     UF3C065080K4S
EAN/GTIN:
     n/a
Search terms:
Junction FET transistor
Power transistor
Transistor
Transistors
Manufacturer: Qorvo (UnitedSiC)
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 23A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate;Kelvin terminal
Gate charge: 43nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Other search terms: power transistor
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