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IC: driver; H-bridge,MOSFET half-bridge; SO8; -1.8÷2.8A; Ch: 2


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IC: driver; H-bridge,MOSFET half-bridge; SO8; -1.8÷2.8A; Ch: 2
IC: driver; H-bridge,MOSFET half-bridge; SO8; -1.8÷2.8A; Ch: 2
Item number:
     4MD6L-UCC27712D
Manufacturer:
     Texas Instruments
Manufacturer no.:
     UCC27712D
EAN/GTIN:
     n/a
Search terms:
IGBT
MOSFET
MOSFET transistor
Transistor
Manufacturer: TEXAS INSTRUMENTS
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...20V DC
Output current: -1.8...2.8A
Type of integrated circuit: driver
Impulse rise time: 50ns
Pulse fall time: 30ns
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: high-/low-side;gate driver
Topology: H-bridge;MOSFET half-bridge
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