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Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23


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Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Item number:
     4MD6L-TSM650P03CX-RFG
Manufacturer:
     Taiwan Semiconductor
Manufacturer no.:
     TSM650P03CX RFG
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: TAIWAN SEMICONDUCTOR
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -2.6A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
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€ 0.887*
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