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Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56


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Product information
Product Image
Product Image
Item number:
     4MD6L-TSM280NB06LCR-RLG
Manufacturer:
     Taiwan Semiconductor
Manufacturer no.:
     TSM280NB06LCR RLG
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: TAIWAN SEMICONDUCTOR
Mounting: SMD
Case: PDFN56
Drain-source voltage: 60V
Drain current: 7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
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