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Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23


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Product information
Product Image
Product Image
Item number:
     4MD6L-TSM2312CX-RFG
Manufacturer:
     Taiwan Semiconductor
Manufacturer no.:
     TSM2312CX RFG
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: TAIWAN SEMICONDUCTOR
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.48W
Polarisation: unipolar
Kind of package: tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±8V
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€ 1.118*
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