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Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56


Quantity:  piece  
Product information

Item number:
     4MD6L-TSM110NB04DCR-RLG
Manufacturer:
     Taiwan Semiconductor
Manufacturer no.:
     TSM110NB04DCR RLG
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
MOSFET
MOSFET transistor
Manufacturer: TAIWAN SEMICONDUCTOR
Mounting: SMD
Case: PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
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