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Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56


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Product information
Product Image
Product Image
Item number:
     4MD6L-TSM110NB04DCR-RLG
Manufacturer:
     Taiwan Semiconductor
Manufacturer no.:
     TSM110NB04DCR RLG
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: TAIWAN SEMICONDUCTOR
Mounting: SMD
Case: PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6W
Polarisation: unipolar
Kind of package: tape
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Offers (2)
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Warehouse 4MD6L
127 days
out of stock
€ 7.90*
from € 0.88*
€ 1.52*
Warehouse 3837
4 days
2250
€ 8.12*
from € 1.09*
€ 1.67*
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Prices: Warehouse 4MD6L
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€ 1.52*
€ 1.87
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from 5 pieces
€ 1.37*
€ 1.69
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€ 1.31*
€ 1.61
per piece
from 25 pieces
€ 1.16*
€ 1.43
per piece
from 50 pieces
€ 1.10*
€ 1.35
per piece
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€ 1.04*
€ 1.28
per piece
from 200 pieces
€ 1.02*
€ 1.25
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from 20000 pieces
€ 0.88*
€ 1.08
per piece
Stock level: Warehouse 4MD6L
Shipping: Warehouse 4MD6L
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€ 7.90*
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