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Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88


Quantity:  piece  
Product information

Item number:
     4MD6L-TSG65N068CE-RVG
Manufacturer:
     Taiwan Semiconductor
Manufacturer no.:
     TSG65N068CE RVG
EAN/GTIN:
     n/a
Search terms:
Junction FET transistor
SMD transistor
SMD transistors
Transistor
Manufacturer: TAIWAN SEMICONDUCTOR
Mounting: SMD
Case: PDFN88
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 68mΩ
Type of transistor: N-JFET
Polarisation: unipolar
Kind of package: tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 6.7nC
Technology: GaN
Kind of transistor: HEMT
Kind of channel: enhancement
Gate-source voltage: -10...7V
Pulsed drain current: 60A
Other search terms: Transistors
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€ 32.20*
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