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Transistor: P-MOSFET; unipolar; -100V; -480mA; Idm: -2.5A; 1.6W


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Product information

Item number:
     4MD6L-TP2510N8-G
Manufacturer:
     Microchip Technology
Manufacturer no.:
     TP2510N8-G
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: MICROCHIP TECHNOLOGY
Mounting: SMD
Case: SOT89-3
Drain-source voltage: -100V
Drain current: -0.48A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: tape;reel
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -2.5A
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