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Transistor: P-MOSFET; unipolar; -40V; -160mA; Idm: -0.8A; 360mW


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Transistor: P-MOSFET; unipolar; -40V; -160mA; Idm: -0.8A; 360mW
Transistor: P-MOSFET; unipolar; -40V; -160mA; Idm: -0.8A; 360mW
Item number:
     4MD6L-TP2104K1-G
Manufacturer:
     Microchip Technology
Manufacturer no.:
     TP2104K1-G
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: MICROCHIP TECHNOLOGY
Mounting: SMD
Case: SOT23-3
Drain-source voltage: -40V
Drain current: -0.16A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.8A
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