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Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A


Quantity:  pieces  
Product information

Item number:
     4MD6L-SUM70060E-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SUM70060E-GE3
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: TO263
Drain-source voltage: 100V
Drain current: 131A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 81nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 240A
An overview of the conditions1
Delivery period
Stock level
Price
€ 1.30*
  
Price is valid from 800 pieces
Orders only in multiples of 800 pieces
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Net
Gross
Unit
from 800 pieces
€ 1.30*
€ 1.60
per piece
from 4000 pieces
€ 1.27*
€ 1.56
per piece
from 8000 pieces
€ 1.26*
€ 1.55
per piece
from 400000 pieces
€ 1.25*
€ 1.54
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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