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Transistor: P-MOSFET; unipolar; -100V; -8.8A; Idm: -15A; 32.1W

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piece

Product information

Item number:
4MD6L-SUD09P10-195-GE3

Manufacturer:
Vishay

Manufacturer no.:
SUD09P10-195-GE3

EAN/GTIN:
n/a

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Diodes
IGBT
Power transistor
MOSFET

Manufacturer: VISHAY
Mounting: SMD
Case: DPAK;TO252
Drain-source voltage: -100V
Drain current: -8.8A
On-state resistance: 0.195Ω
Type of transistor: P-MOSFET
Power dissipation: 32.1W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 34.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A

... > Unipolar transistors > P channel transistors > SMD P channel transistors

Other search terms: MOSFET transistor, Transistor, Transistors

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€ 1.18*

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Order quantity	Net	Gross	Unit

1 piece	€ 1.18*	€ 1.45	per piece
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