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Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A


Quantity:  piece  
Product information

Item number:
     4MD6L-STP50N60DM6
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STP50N60DM6
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
MOSFET
Manufacturer: STMicroelectronics
Mounting: THT
Case: TO220-3
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: MDmesh™ M6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 137A
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€ 7.96*
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