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Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -7.5A; Idm: -30A


Quantity:  pieces  
Product information

Item number:
     4MD6L-SQA413CEJW-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SQA413CEJW-T1_GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: -20V
Drain current: -7.5A
On-state resistance: 58.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 13.6W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
An overview of the conditions1
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€ 0.165*
  
Price is valid from 3,000 pieces
Orders only in multiples of 3,000 pieces
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from 3000 pieces
€ 0.165*
€ 0.20295
per piece
from 6000 pieces
€ 0.163*
€ 0.20049
per piece
from 15000 pieces
€ 0.157*
€ 0.19311
per piece
from 30000 pieces
€ 0.153*
€ 0.18819
per piece
from 1500000 pieces
€ 0.15*
€ 0.1845
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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