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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A


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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Item number:
     4MD6L-SQ3427AEEV-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SQ3427AEEV-T1_GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: TSOP6
Drain-source voltage: -60V
Drain current: -5.3A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -21A
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