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Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 42.1W


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Product information

Item number:
     4MD6L-SISS66DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISS66DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 142.6A
On-state resistance: 2.19mΩ
Type of transistor: N-MOSFET + Schottky
Power dissipation: 42.1W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 85.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 200A
Other search terms: SMD transistors, smd transistor
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