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Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A


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Product information

Item number:
     4MD6L-SISS64DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISS64DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 2.86mΩ
Type of transistor: N-MOSFET + Schottky
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 68nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 100A
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