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Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A


Quantity:  packets  
Product information

Item number:
     4MD6L-SISS5808DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISS5808DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
An overview of the conditions1
Delivery period
Stock level
Price
from € 2,750.70*
  
Price is valid from 20 packets
1 packet contains 3,000 pieces (from € 0.9169* per piece)
Orders only in multiples of 2 packets
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Staggered prices
Order quantity
Net
Gross
Unit
from 2 packets
€ 2,821.05*
€ 3,469.8915
per packet
from 4 packets
€ 2,810.16*
€ 3,456.4968
per packet
from 10 packets
€ 2,768.58*
€ 3,405.3534
per packet
from 20 packets
€ 2,750.70*
€ 3,383.361
per packet
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.