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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A


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Product information

Item number:
     4MD6L-SISS27DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISS27DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 0.14µC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
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€ 1.08*
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€ 0.73
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€ 0.51*
€ 0.63
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€ 0.46*
€ 0.57
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€ 0.43*
€ 0.53
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€ 0.52
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€ 0.46
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