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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W


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Product information

Item number:
     4MD6L-SISH112DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISH112DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 14.2A
On-state resistance: 8.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
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