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Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W

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piece

Product information

Item number:
4MD6L-SISH108DN-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SISH108DN-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 20V
Drain current: 17.6A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistors, Transistor, Transistors, smd transistor

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