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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 65A; 17W


Quantity:  pieces  
Product information

Item number:
     4MD6L-SISA96DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISA96DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 17W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 31nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Other search terms: SMD transistors, smd transistor
An overview of the conditions1
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from € 0.19*
  
Price is valid from 90,000 pieces
Minimum order quantity: 3 pieces
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€ 0.4182
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€ 0.327*
€ 0.40221
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€ 0.307*
€ 0.37761
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€ 0.27*
€ 0.3321
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€ 0.26*
€ 0.3198
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€ 0.25*
€ 0.3075
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€ 0.231*
€ 0.28413
per piece
from 600 pieces
€ 0.221*
€ 0.27183
per piece
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€ 0.22*
€ 0.2706
per piece
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€ 0.19*
€ 0.2337
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