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Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 9.7A; Idm: 20A


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Product information

Item number:
     4MD6L-SIS990DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIS990DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 100V
Drain current: 9.7A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET x2
Power dissipation: 16W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Other search terms: SMD transistors, smd transistor
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