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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A; 10W


Quantity:  packet  
Product information

Item number:
     4MD6L-SIS822DNT-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIS822DNT-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 10W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
An overview of the conditions1
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from € 0.675*
  
Price is valid from 30,000 packets
1 packet contains 5 pieces (from € 0.135* per piece)
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€ 1.37145
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€ 1.21155
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€ 0.955*
€ 1.17465
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€ 0.83025
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