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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A


Quantity:  piece  
Product information

Item number:
     4MD6L-SIS4608LDN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIS4608LDN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 28.9A
On-state resistance: 15.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 17.4W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Other search terms: SMD transistors, Transistor, Transistors
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€ 1.27*
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€ 0.76
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€ 0.52*
€ 0.64
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€ 0.47*
€ 0.58
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€ 0.45*
€ 0.55
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€ 0.49
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