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Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A


Quantity:  piece  
Product information

Item number:
     4MD6L-SIRA50DP-T1-RE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIRA50DP-T1-RE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
Power dissipation: 64W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 194nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 400A
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