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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 90A; 11W

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piece

Product information

Item number:
4MD6L-SIRA28BDP-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIRA28BDP-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 14nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistors, smd transistor

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Order quantity	Net	Gross	Unit

1 piece	€ 0.91*	€ 1.12	per piece
from 5 pieces	€ 0.44*	€ 0.54	per piece
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from 50 pieces	€ 0.37*	€ 0.46	per piece
from 100 pieces	€ 0.33*	€ 0.41	per piece
from 500 pieces	€ 0.28*	€ 0.34	per piece
from 2500000 pieces	€ 0.24*	€ 0.30	per piece

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