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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W

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piece

Product information

Item number:
4MD6L-SIRA18BDP-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIRA18BDP-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power MOSFET
Power transistor
MOSFET
MOSFET transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 90A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistor, SMD transistors, Transistor, Transistors

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€ 0.635*

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Order quantity	Net	Gross	Unit

1 piece	€ 0.635*	€ 0.78105	per piece
from 10 pieces	€ 0.469*	€ 0.57687	per piece
from 50 pieces	€ 0.439*	€ 0.53997	per piece
from 100 pieces	€ 0.318*	€ 0.39114	per piece
from 250 pieces	€ 0.296*	€ 0.36408	per piece
from 500 pieces	€ 0.276*	€ 0.33948	per piece
from 100000 pieces	€ 0.236*	€ 0.29028	per piece

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