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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W

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piece

Product information

Item number:
4MD6L-SIRA14DP-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIRA14DP-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 46A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 29nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 130A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistors, Transistor, Transistors, smd transistor

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Order quantity	Net	Gross	Unit

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