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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 100A


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Product information

Item number:
     4MD6L-SIRA02DP-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIRA02DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45.7W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 117nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 100A
An overview of the conditions1
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from € 0.89*
  
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€ 2.09
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€ 1.88
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€ 1.47*
€ 1.81
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€ 1.30*
€ 1.60
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€ 1.21*
€ 1.49
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€ 1.05*
€ 1.29
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€ 1.04*
€ 1.28
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€ 0.89*
€ 1.09
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