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Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 51.4A; Idm: 120A


Quantity:  packets  
Product information

Item number:
     4MD6L-SIR876BDP-T1-RE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIR876BDP-T1-RE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 100V
Drain current: 51.4A
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 71.4W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
An overview of the conditions1
Delivery period
Stock level
Price
from € 3.23*
  
Price is valid from 300,000 packets
1 packet contains 5 pieces (from € 0.646* per piece)
Orders only in multiples of 600 packets
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Staggered prices
Order quantity
Net
Gross
Unit
from 600 packets
€ 3.35*
€ 4.1205
per packet
from 1200 packets
€ 3.34*
€ 4.1082
per packet
from 3000 packets
€ 3.28*
€ 4.0344
per packet
from 6000 packets
€ 3.25*
€ 3.9975
per packet
from 300000 packets
€ 3.23*
€ 3.9729
per packet
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.