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Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 116A; Idm: 300A


Quantity:  packet  
Product information

Item number:
     4MD6L-SIR582DP-T1-RE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIR582DP-T1-RE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 80V
Drain current: 116A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 92.5W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 67nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Other search terms: SMD transistors, smd transistor
An overview of the conditions1
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from € 2,670.48*
  
Price is valid from 500 packets
1 packet contains 3,000 pieces (from € 0.89016* per piece)
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€ 3,398.8221
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