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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 117A; Idm: 200A


Quantity:  pieces  
Product information

Item number:
     4MD6L-SIR182DP-T1-RE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIR182DP-T1-RE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 117A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 64nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Other search terms: SMD transistors, smd transistor
An overview of the conditions1
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Price
from € 0.94*
  
Price is valid from 30,000 pieces
Orders only in multiples of 3,000 pieces
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Net
Gross
Unit
from 3000 pieces
€ 0.96*
€ 1.18
per piece
from 15000 pieces
€ 0.95*
€ 1.17
per piece
from 30000 pieces
€ 0.94*
€ 1.16
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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