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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 373A; Idm: 500A

Quantity:

pieces

Product information

Item number:
4MD6L-SIJH600E-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIJH600E-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 8x8L
Drain-source voltage: 60V
Drain current: 373A
On-state resistance: 1.15mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 212nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistors, Transistor, Transistors, smd transistor

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Order quantity	Net	Gross	Unit

from 2000 pieces	€ 4.41*	€ 5.42	per piece
from 4000 pieces	€ 4.40*	€ 5.41	per piece
from 10000 pieces	€ 4.36*	€ 5.36	per piece
from 20000 pieces	€ 4.35*	€ 5.35	per piece

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