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Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD


Quantity:  piece  
Product information

Item number:
     4MD6L-SIHW61N65EF-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHW61N65EF-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: VISHAY
Mounting: THT
Case: TO247AD
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 371nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 199A
Other search terms: Transistors
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€ 27.42*
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