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Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W


Quantity:  piece  
Product information

Item number:
     4MD6L-SIHU3N50D-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHU3N50D-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: VISHAY
Mounting: THT
Case: IPAK;TO251
Drain-source voltage: 500V
Drain current: 1.9A
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 5.5A
Other search terms: Transistors
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