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Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W

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piece

Product information

Item number:
4MD6L-SIHP17N60D-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIHP17N60D-GE3

EAN/GTIN:
n/a

Search terms:

Field effect transistor
Field effect transistors
Power transistor
MOSFET

Manufacturer: VISHAY
Mounting: THT
Case: TO220AB
Drain-source voltage: 600V
Drain current: 10.7A
On-state resistance: 0.34Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Kind of package: tube
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A

... > Unipolar transistors > N channel transistors > THT N channel transistors

Other search terms: MOSFET transistor, Transistor, Transistors, field effect transistor

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Order quantity	Net	Gross	Unit

1 piece	€ 3.68*	€ 4.53	per piece
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from 100 pieces	€ 2.30*	€ 2.83	per piece
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