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Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB


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Product information

Item number:
     4MD6L-SIHP12N65E-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHP12N65E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: THT
Case: TO220AB
Drain-source voltage: 650V
Drain current: 8A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 28A
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