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Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W


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Product information

Item number:
     4MD6L-SIHJ7N65E-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHJ7N65E-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 650V
Drain current: 5A
On-state resistance: 598mΩ
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 17A
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